|
ESSDERC 2009 : 14-18 September 2009 - Athens- Greece
First Announcement and Call for papers
 brochure
ESSDERC & ESSCIRC 2009 will be held in Athens, Greece from 14-18
September 2009.
--> go to the 2009 Athens website
ESSDERC 2009 : General scope of the conference
The main themes for original contributions to be submitted to ESSDERC 2009 include (but
are not limited to) the following:
Advanced CMOS Devices
Ultimate CMOS scaling, high performance, low power and low voltage devices, novel MOS device architectures (double and multiple gate, vertical, ballistic), high-mobility channel engineered devices, SOI, SGOI, and SiON devices; SiGe, Ge, and strained devices.
Process & Integration
Gate dielectrics, high k, gate stack, junction technology, cleaning and surface preparation, 3D integration, interconnects, low k dielectrics, advances in integration for ULSI; SOI, SGOI; advanced/novel memory process integration; logic and mixed-mode IC manufacturing; RF integration (passives, active devices); photonics integration.
Telecommunication & Power Devices
RF CMOS, analog and mixed signal devices, passives, antennas, filters, RF MEMS, Bipolar, BiCMOS, compound semiconductors (GaAs, InP, GaN, SiC, alloys) and optoelectronic devices, smart power devices, high-voltage, high power devices, high temperature operation, SiC devices, CMOS compatible power devices, IC cooling.
Modeling and Simulation
Numerical and analytical modeling of solid-state electronic and optoelectronic devices, quantum mechanical and non-stationary transport phenomena, ballistic transport, compact circuit modeling for devices and interconnects, modeling and simulation of front-end and back-end fabrication processes, electro-thermal modeling and simulation.
Charactrization and Reliability
Characterization techniques, parameter extraction, advanced test structures and methodologies, reliability issues for new materials and devices (reliability of high-k and low-k materials), reliability of advanced interconnects, ESD, EMI, defect monitoring and control, metrology.
Memories
Embedded and stand-alone memories, DRAM, FeRAM, MRAM, PCRAM, CBRAM, Flash, SONOS, nanocrystal memories, single and few electron memories, 3D IC stacks, organic memories.
MEMS, Displays and SoC
Design, fabrication, modeling, reliability and packaging of all physical sensors and MEMS categories, bio-sensors for chemical, molecular and biological applications, BioMEMS, devices and technologies for lab-on-chip, integration of detectors, sensors, and actuators, CCDs and CMOS imagers, optical on chip communication, display technologies, TFTs, organic electronics, flexible substrate electronics, SoC and SiP packaging, microsystem packaging.
Emerging non-CMOS devices and technologies
Nanotubes, nanowires and nanoparticles for electronic, optoelectronic and sensor applications, materials and device related issues, single-electron, molecular and quantum devices, nanophotonics, spintronics, self-assembling methods, photonic devices.
To further emphasize the interactions between the device and circuits communities especially
in the domain of emerging technologies, the conference will offer joint sessions.
These sessions will focus on topics at the boundary between design and technology depending on the submitted abstracts. Contributions are solicited (but not limited) in the areas of circuit design and simulation techniques for process variability in nm-scale technologies as well as of microwave components over silicon substrates.
|